PDTD143ET

SOT23 PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP PDTD143ET SOT23 PDTD143XT PDTD114ET JEITA - JEDEC PNP complement TO-236AB PDTB143ET PDTB143XT PDTB114ET Package configuration small 1.2 Features  500 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count   10 % resistor ratio tolerance  AEC-Q101 qualified  High temperature applications up to 175 °C 1.3 Applications  IC inputs control  Cost-saving alternative to BC807 or BC817 series transistors in digital applications  Switching loads NXP Semiconductors PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) PDTD143ET PDTD143XT PDTD114ET bias resistor 2 (base-emitter) PDTD143ET PDTD143XT PDTD114ET Conditions open base Min Typ Max Unit - - 50 V - - 500 mA 4.7 k 4.7 k 10 k 4.7 k 10 k 10 k 2. Pinning information Table 3. Pin 1 2 3 Pinning Description input (base) GND (emitter) output (collector) Simplified outline Graphic symbol 3 1 R1 1 R2 2 sym007 3. Ordering information Table 4. Ordering informati...