PDTD113ZT

PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 02 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZT. 1.2 Features I Built-in bias resistors I Simplifies circuit design I 500 mA output current capability I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Controlling IC inputs I Cost-saving alternative for BC817 series in digital applications I Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ Max Unit - - 50 V - - 500 mA 0.7 1 1.3 kΩ 9 10 11 NXP Semiconductors PDTD113ZT NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ 2. Pinning information Table 2. Pin 1 2 3 Pinning Description input (base) GND (emitter) output (collector) Simplified outline Graphic symbol 3 12 R1 1 3 R2 2 sym007 3. Ordering information Table 3. Ordering information Type number Package Name Description PDTD113ZT - plastic surface-mounted package; 3 leads 4. Marking Table 4. Marking codes Type number PDTD113ZT [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * ...