Document
SOT883B
PDTC143TMB
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open
Rev. 2 — 4 May 2012
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA143TMB.
1.2 Features and benefits
100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified Leadless ultra small SMD plastic
package Low package height of 0.37 mm
1.3 Applications
Low-current peripheral driver Control of IC inputs
Replaces general-purpose transistors in digital applications
Mobile applications
1.4 Quick reference data
Table 1. Symbol VCEO
IO R1
Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input)
Conditions open base
Tamb = 25 °C
Min Typ Max Unit - - 50 V
- - 100 mA 3.3 4.7 6.1 kΩ
NXP Semiconductors
PDTC143TMB
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open
2. Pinning information
Table 2. Pin 1 2 3
Pinning information Symbol Description I input (base) G GND (emitter) O output (collector)
Simplified outline
Graphic symbol
1 3
2
Transparent top view
SOT883B (DFN1006B-3)
R1
1
3
2
sym012
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PDTC143TMB
DFN1006B-3
Description
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
4. Marking
Version SOT883B
Table 4. Marking codes Type number PDTC143TMB
Marking code 0011 1011
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE: 0111 1011
READING DIRECTION
Fig 1. DFN1006B-3 (SOT883B) binary marking code description
MARKING CODE (EXAMPLE)
006aac673
PDTC143TMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 May 2012
© NXP B.V. 2012. All rights reserved.
2 of 11
NXP Semiconductors
PDTC143TMB
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO VCEO VEBO IO ICM Ptot Tj Tamb Tstg
collector-base voltage collector-emitter voltage emitter-base voltage output current peak collector current total power dissipation junction temperature ambient temperature storage temperature
open emitter open base open collector
pulsed; tp ≤ 1 ms Tamb ≤ 25 °C
Min [1] -65 -65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max Unit 50 V 50 V 5V 100 mA 100 mA 250 mW 150 °C 150 °C 150 °C
300
Ptot (mW)
200
006aad009
100
0 -75 -25 25 75
FR4 PCB, standard footprint Fig 2. Power derating curve for DFN1006B-3 (SOT883B)
125 175 Tamb (°C)
PDTC143TMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 May 2012
© NXP B.V. 2012. All rights reserved.
3 of 11
NXP Semiconductors
PDTC143TMB
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open
6. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions in free air
[1]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Min Typ Max Unit - - 500 K/W
103 Zth(j-a) (K/W)
102
10
duty cycle =
1 0.75
0.5 0.33
0.2
0.1
0.05 0.02
0.01
0
006aab603
1 10−5
10−4
10−3
10−2
10−1
FR4 PCB, standard footprint
1
10 102 103 tp (s)
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Symbol ICBO
ICEO
IEBO
hFE VCEsat
R1 CC
fT
Characteristics
Parameter
Conditions
collector-base cut-off VCB = 50 V; IE = 0 A; Tamb = 25 °C current
collector-emitter cut-off current
emitter-base cut-off current
VCE = 30 V; IB = 0 A; Tamb = 25 °C VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A; Tamb = 25 °C
DC current gain
collector-emitter saturation voltage
VCE = 5 V; IC = 1 mA; Tamb = 25 °C IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C
bias resistor 1 (input) collector capacitance
transition frequency
Tamb = 25 °C
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C
VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C
[1] Characteristics of built-in transistor.
[1]
PDTC143TMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 May 2012
Min Typ Max Unit - - 100 nA
- - 1 µA - - 5 µA - - 100 nA
200 --
3.3 4.7 --
100 mV
6.1 kΩ 2.5 pF
- 230 - MHz
© NXP B.V. 2012. All rights reserved.
4 of 11
NXP Semiconductors
PDTC143TMB
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open
103
(1) (2)
hFE
(3)
102
006aad070
10 10-1
1
10 102 IC (A)
VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C
Fig 4. DC current gain as a function of collector current; typical values
3
Cc (pF)
2
006aad.