DatasheetsPDF.com

PDTC143TMB Dataheets PDF



Part Number PDTC143TMB
Manufacturers NXP
Logo NXP
Description NPN resistor-equipped transistor
Datasheet PDTC143TMB DatasheetPDTC143TMB Datasheet (PDF)

SOT883B PDTC143TMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TMB. 1.2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  .

  PDTC143TMB   PDTC143TMB


Document
SOT883B PDTC143TMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TMB. 1.2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm 1.3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.4 Quick reference data Table 1. Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) Conditions open base Tamb = 25 °C Min Typ Max Unit - - 50 V - - 100 mA 3.3 4.7 6.1 kΩ NXP Semiconductors PDTC143TMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description I input (base) G GND (emitter) O output (collector) Simplified outline Graphic symbol 1 3 2 Transparent top view SOT883B (DFN1006B-3) R1 1 3 2 sym012 3. Ordering information Table 3. Ordering information Type number Package Name PDTC143TMB DFN1006B-3 Description Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm 4. Marking Version SOT883B Table 4. Marking codes Type number PDTC143TMB Marking code 0011 1011 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 READING DIRECTION Fig 1. DFN1006B-3 (SOT883B) binary marking code description MARKING CODE (EXAMPLE) 006aac673 PDTC143TMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 2 of 11 NXP Semiconductors PDTC143TMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCBO VCEO VEBO IO ICM Ptot Tj Tamb Tstg collector-base voltage collector-emitter voltage emitter-base voltage output current peak collector current total power dissipation junction temperature ambient temperature storage temperature open emitter open base open collector pulsed; tp ≤ 1 ms Tamb ≤ 25 °C Min [1] -65 -65 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Max Unit 50 V 50 V 5V 100 mA 100 mA 250 mW 150 °C 150 °C 150 °C 300 Ptot (mW) 200 006aad009 100 0 -75 -25 25 75 FR4 PCB, standard footprint Fig 2. Power derating curve for DFN1006B-3 (SOT883B) 125 175 Tamb (°C) PDTC143TMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 © NXP B.V. 2012. All rights reserved. 3 of 11 NXP Semiconductors PDTC143TMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Min Typ Max Unit - - 500 K/W 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 006aab603 1 10−5 10−4 10−3 10−2 10−1 FR4 PCB, standard footprint 1 10 102 103 tp (s) Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Symbol ICBO ICEO IEBO hFE VCEsat R1 CC fT Characteristics Parameter Conditions collector-base cut-off VCB = 50 V; IE = 0 A; Tamb = 25 °C current collector-emitter cut-off current emitter-base cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 °C VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A; Tamb = 25 °C DC current gain collector-emitter saturation voltage VCE = 5 V; IC = 1 mA; Tamb = 25 °C IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C bias resistor 1 (input) collector capacitance transition frequency Tamb = 25 °C VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C [1] Characteristics of built-in transistor. [1] PDTC143TMB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 May 2012 Min Typ Max Unit - - 100 nA - - 1 µA - - 5 µA - - 100 nA 200 -- 3.3 4.7 -- 100 mV 6.1 kΩ 2.5 pF - 230 - MHz © NXP B.V. 2012. All rights reserved. 4 of 11 NXP Semiconductors PDTC143TMB NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open 103 (1) (2) hFE (3) 102 006aad070 10 10-1 1 10 102 IC (A) VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C Fig 4. DC current gain as a function of collector current; typical values 3 Cc (pF) 2 006aad.


PDTC143EM PDTC143TMB PDTC143T


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)