MS34P07

P-Channel 20-V (D-S) MOSFET MS34P07 Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 34 @ VGS = -4.5V 48 @ VGS = -2.5V ID(A) -5 -3 TSOP6 Drain: 1,2,5,6 Gate: 3 Source: 4 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25°C TA=100°C TA=25°C ID IDM IS PD -5 -3.3 -20 -1 1.40 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 62.5 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Test Conditions Static VGS(th) IGSS IDSS ID(on) rDS(o...