MSB90N10

MSB90N10 N-Channel 100-V (D-S) MOSFET Description The MSB90N10 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-263 package is universally preferred for all commercial-industrial applications Features Low rDS(on) trench technology Low thermal impedance Fast switching speed RoHS compliant package Application White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MSB90N10] © Bruckewell Technology Corporation Rev. A -2014 MSB90N10 N-Channel 100-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TC=25°C) Continuous Drain Currenta (TC =70°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a Power Dissipationa (TC =25°C) PD Power Dissipationa (TC =70°C) TJ/TSTG Operating Junction and Storage Temperature Value 100 ±20 90 90 360 90 300 150 -55 to +175 Unit V V A A A A W W °C Thermal Resistance Ratings Symbol Parameter RθJA Maximum Junction-to-Ambienta RθJC Maximum Junction-to-Case Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. Maximum 62.5 0.5 ...