N-Channel 700V MOSFET
MSF11N70
N-Channel 700V MOSFET
Description The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer ...
Description
MSF11N70
N-Channel 700V MOSFET
Description The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package available Packing & Order Information 50/Tube ; 1,000/Box
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Continuous Drain Current @ TC=25°C ID
Continuous Drain Current @ TC=100°C
IDM Pulsed Drain Current
IAR Avalanche Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Value 700 ±30 1.1 6.5 40 10 658 17.8 4.5
Unit V V A A A A mJ mJ
V/ns
Publication Order Number: [MSF11N70]
© Bruckewell Technology Corporation Rev. A -2014
MSF11N70
N-Channel 700V MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Power Dissipation (TC=25°C) PD
Power Dissipation (TC=100°C)
TSTG
Operating and Storage Temperature Range
NOTE:
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 15mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ...
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