DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2201T1M
N-CHANNEL MOS FET FOR SWITCHING
DESCRIPTION The μ PA2201T1M is N-cha...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2201T1M
N-CHANNEL MOS FET FOR SWITCHING
DESCRIPTION The μ PA2201T1M is N-channel MOS Field Effect
Transistor designed
for power management applications of portable equipments, such as load switch.
FEATURES Low on-state resistance
RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A) Built-in gate protection diode 2.5 V Gate drive available
ORDERING INFORMATION
PART NUMBER
PACKING
PACKAGE
μ PA2201T1M-T1-AT Note μ PA2201T1M-T2-AT Note
8 mm embossed taping 8-pin VSOF (1629)
3000 p/reel
0.011 g TYP.
Note Pb-free (This product does not contain Pb in external electrode and
other parts.)
0.225±0.1
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65 8
5
A
0.145±0.05 0 to 0.025
1.9±0.1 1.6±0.1
1 0.32±0.05
4 0.05 M S A
0.8±0.05
S 0.05 S
1, 2, 3, 6, 7, 8: Drain 4 : Gate 5 : Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
20 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12 V
Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 5 sec) Note2
ID(DC) ID(pulse) PT1 PT2
±9 ±36 1.1 2.5
A A W W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connecte...