UPA1855

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES Can be driven by a 2.5 V power source Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 24 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 29 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) Built-in G-S protection diode against ESD ORDERING INFORMATION PART NUMBER PACKAGE PACKAGE DRAWING (Unit : mm) 85 1 :Drain1 2, 3 :Source1 4 :Gate1 5 :Gate2 6, 7 :Source2 8 :Drain2 1.2 MAX. 1.0±0.05 0.25 14 3° +5° –3° 0.1±0.05 0.5 0.6 +0.15 –0.1 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 0.145 ±0.055 µPA1855GR-9JG Power TSSOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) 0.65 0.8 MAX. 0.27 +0.03 –0.08 0.10 M 0.1 Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 ±12 ±6.0 ±24 2.0 150 –55 to +150 V V A A W °C °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm EQUIVALENT CIRCUIT Drain1 Drain2 Gate1 Body Diode Gate2 Body Diode Gate Protection Source1 Diode Gate Protec...