NP80N06ELD

PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Channel Temperature 175 degree rated Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) Low Ciss : Ciss = 2360 pF (TYP.) Built-in Gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP80N06CLD TO-220AB NP80N06DLD TO-262 NP80N06ELD TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) ±80 ±210 Total Power Dissipation (TA = 25 °C) PT 1.8 Total Power Dissipation (Tch = 25 °C) PT 100 Single Avalanche Current Single Avalanche Energy Note2 IAS TBD EAS TBD Channel Temperature Tch 175 Storage Temperature Tstg –55 to + 175 V V A A W W A mJ °C °C Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V →0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) 1.50 °C/W Rth(ch-A) 83.3 °C/W The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this devic...