KTN2907AU

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222U/2222AU. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2907U KTN2907AU Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature IC PC Tj -600 mA 100 mW 150 Storage Temperature Range Tstg -55 150 KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. EMITTER 2. BASE 3. COLLECTOR USM Marking Type Name ZD Lot No. Type Name ZH Lot No. KTN2907U KTN2907AU MARK SPEC TYPE KTN2907U KTN2907AU MARK ZD ZH 2008. 8. 29 Revision No : 5 1/4 KTN2907U/AU ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICEX Collector Cut-off Current KTN2907U KTN2907AU ICBO Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage * KTN2907U V(BR)CEO KTN2907AU Emitter-Base Breakdown Voltage V(BR)EBO KTN2907U KTN2907AU hFE(1) KTN2907U KTN2907AU hFE(2) DC Current Gain KTN2907U * KTN2907AU hFE(3) KTN2907...