Document
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907U/2907AU.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222U KTN2222AU
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
VCBO VCEO VEBO
IC
PC
Tj
60 75 30 40 56
600
100
150
V V V mA
mW
Storage Temperature Range
Tstg
-55 150
KTN2222U/AU
EPITAXIAL PLANAR NPN TRANSISTOR
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
C L
L HM
0.70 0.42 +_0.10
NK
N
N 0.10 MIN P 0.1 MAX
1. EMITTER 2. BASE 3. COLLECTOR
USM
Marking
Type Name
ZB
Lot No. Type Name
ZG
Lot No.
KTN2222U
KTN2222AU
MARK SPEC TYPE
KTN2222U KTN2222AU
MARK ZB ZG
2008. 8. 29
Revision No : 3
1/5
KTN2222U/AU
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current
KTN2222AU
ICEX
VCE=60V, VEB(OFF)=3V
KTN2222U
VCB=50V, IE=0
ICBO
KTN2222AU
VCB=60V, IE=0
KTN2222AU IEBO VEB=3V, IC=0
Collector-Base Breakdown Voltage
KTN2222U KTN2222AU
V(BR)CBO
IC=10 A, IE=0
Collector-Emitter Breakdown Voltage
* KTN2222U V(BR)CEO IE=10mA, IB=0
KTN2222AU
Emitter-Base Breakdown Voltage
KTN2222U KTN2222AU
V(BR)EBO
DC Current Gain
KTN2222U
KTN2222AU *
hFE(1) hFE(2) hFE(3) hFE(4)
KTN2222U KTN2222AU
hFE(5)
Collector-Emitter Saturation Voltage
KTN2222U VCE(sat)1
* KTN2222AU
KTN2222U KTN2222AU
VCE(sat)2
Base-Emitter Saturation Voltage
KTN2222U VBE(sat)1
* KTN2222AU
KTN2222U KTN2222AU
VBE(sat)2
Transition Frequency
KTN2222U KTN2222AU
fT
Collector Output Capacitance
Cob
Input Capacitance
KTN2222U KTN2222AU
Cib
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
IE=10 A, IC=0 IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz
MIN. TYP. MAX. UNIT
- - 10 nA
- - 0.01 A
- - 0.01
- - 10 nA
60 -
-
V
75 -
-
30 -
-
40 - - V
5- 6- -V
35 -
-
50 -
-
75 -
-
100 - 300
30 -
-
40 -
-
- - 0.4
- - 0.3 V
- - 1.6
- -1
- - 1.3
0.6 - 1.2 V
- - 2.6
- - 2.0
250 300 -
MHz
-
- - 8 pF
- - 30 pF
- - 25
2008. 8. 29
Revision No : 3
2/5
KTN2222U/AU
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Input Impedance
KTN2222AU
Voltage Feedback Ratio
KTN2222AU
Small-Singal Current Gain
KTN2222AU
Collector Output Admittance KTN2222AU
Collector-Base Time Constant KTN2222AU
Noise Figure
KTN2222AU
Switching Time
Delay Time Rise Time Storage Time Fall Time
hie
hre
hfe
hoe Cc rbb’
NF td tr tstg tf
IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IC=1mA, VCE=10V, f=1kHz IC=10mA, VCE=10V, f=1kHz IE=20mA, VCB=20V, f=31.8MHz IC=100 A, VCE=10V, Rg=1k , f=1kHz VCC=30V, VBE(OFF)=0.5V IC=150mA, IB1=15mA
VCC=30V, IC=150mA IB1=-IB2=15mA
MIN. 2
0.25 50 75 5 25 -
TYP. MAX. UNIT
-8 k
- 1.25
-8 x10-4
-4
- 300
- 375
- 35
- 200
- 150 pS
- - 4 dB
- - 10
- - 25 nS
- - 225
- - 60
2008. 8. 29
Revision No : 3
3/5
KTN2222U/AU
2008. 8. 29
Revision No : 3
4/5
KTN2222U/AU
2008. 8. 29
Revision No : 3
5/5
.