KTN2222AS

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907S/2907AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2222S KTN2222AS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature VCBO VCEO VEBO IC PC Tj 60 75 30 40 56 600 350 150 V V V mA mW Storage Temperature Range Tstg -55 150 Note : PC* : Package Mounted on 99.5% alumina 10 8 0.6mm. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking Type Name ZB Lot No. ZGType Name Lot No. MARK SPEC TYPE KTN2222S KTN2222AS MARK ZB ZG 1999. 5. 4 Revision No : 2 1/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector Cut-off Current KTN2222AS KTN2222S KTN2222AS ICEX ICBO VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 Emitter Cut-off Current KTN2222AS IEBO VEB=3V, IC=0 Collector-Base Breakdown Voltage KTN2222S KTN2222AS V(BR)CBO IC=10 A, IE=0 Collector-Emitte...