KTD1624

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB1124. KTD1624 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC PC* Tj 60 50 6 3 6 600 500 1 150 Storage Temperature Range Tstg -55 150 * : Package mounted on ceramic substrate(250mm2 0.8t) UNIT V V V A A mA mW W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO VCB=40V, IE=0 IEBO VEB=4V, IC=0 hFE(1) (Note) VCE=2V, IC=100 hFE (2) VCE=2V, IC=3A VCE(sat) IC=2A, IB=100 VBE(sat) IC=2A, IB=100 fT VCE=10V, IC=50 Cob VCB=10V, f=1 , IE=0 Turn-on Time ton Switching Time Storage Time tstg Fall Time tf Note : hFE (1) Classification A:100 200, B:140 280, C:200 400 2008. 3. 11 Revision No : 5 MIN. - 100 35 - TYP. - 0.19 0.94 150 25 MAX. UNIT. 1 1 400 0.5 V 1.2 V - - 70 - - 650 - nS - 35 - 1/3 KTD1624 2008. 3. 11 Revision No : 5 2/3 KTD1624 2...