KTD1347

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES ᴌAdoption of MBIT processes. ᴌLow collector-to-emitter saturation voltage. ᴌFast switching speed. ᴌLarge current capacity and wide ASO. ᴌComplementary to KTB985. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Range Tstg RATING 60 50 6 3 6 1 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O D KTD1347 EPITAXIAL PLANAR NPN TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 H K L 0.35 MIN 0.75+_ 0.10 M4 N 25 O 1.25 P Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 TO-92L ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100Ὠ VCE=2V, IC=3A IC=2A, IB=100Ὠ IC=2A, IB=100Ὠ VCE=10V, IC=50Ὠ VCB=10V, IE=0, f=1ὲ Switching Time Turn-on Time Storage Time ton tstg PDWC =<=210%µs I B1 INPUT VR 50 R8 I B...