KTD1304

SEMICONDUCTOR TECHNICAL DATA AUDIO MUTING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). Low on Resistance : RON=0.6 (Max.) (IB=1mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 25 20 12 300 30 200 150 -55 150 UNIT V V V mA mA mW KTD1304 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking MAXType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO DC Current Gain hFE1 (FOR) hFE2 (REV) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Transition Frequency fT Collector Output Capacitance Cob On Resistance Ron TEST CONDITION VCB=25V, IE=0 VEB=12V, IC=0 VCE=2V, IC=4mA VCE=2V, IC=4mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz f=1KHz, IB=1mA, Vin=0.3V MIN. - 200 20 - TYP. 60 10 0.6 MAX. 0.1 0.1 800 0.25 1 - UNIT A A V V MHz pF 2011. 6. 29 Revisi...