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KTD1028

EPITAXIAL PLANAR NPN TRANSISTOR

Description

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Volt...

KEC

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