IRF8252TRPBF-1

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 25 V 2.7 mΩ 35 nC 25 A IRF8252TRPbF-1 HEXFET® Power MOSFET S1 AA 8D S2 7D S3 6D G4 5D Top View SO-8 Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF8252PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF8252TRPbF-1 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Max. 25 ±20 25 20 200 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 10 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF8252TRPbF-1 Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) I...