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IRF7799L2PBF

International Rectifier

Power MOSFET

IRF7799L2PbF l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance I...


International Rectifier

IRF7799L2PBF

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Description
IRF7799L2PbF l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques l Industrial Qualified Applicable DirectFET Outline and Substrate Outline  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS 250V min ± 30V max Qg tot Qgd 110nC 39nC RDS(on) 32mΩ@ 10V Vgs(th) 4.0V S S D GS S S S SD S L8 DirectFET™ ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enable...




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