DMB54D0UDW

DMB54D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) ESD Protected MOSFET Gate up to 2kV "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.006 grams (approximate) SOT-363 D2 Q1 B E Q2 ESD protected gate up to 2kV TOP VIEW Maximum Ratings – MOSFET, Q1 @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) Continuous Symbol VDSS VGSS ID IDM S2 G2 C TOP VIEW Internal Schematic Value 50 ±12 160 560 Units V V mA mA Maximum Ratings - PNP Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value -50 -45 -5.0 -100 Unit...