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SFS1002G Dataheets PDF



Part Number SFS1002G
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Surface Mount Super Fast Rectifiers
Datasheet SFS1002G DatasheetSFS1002G Datasheet (PDF)

SFS1001G thru SFS1008G Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Low forward voltage drop - Ideal for automated placement - High current capability - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating .

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SFS1001G thru SFS1008G Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Low forward voltage drop - Ideal for automated placement - High current capability - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37 g (approximately) TO-263AB (D2PAK) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) SFS SFS SFS SFS SFS SFS SFS SFS PARAMETER SYMBOL 1001 1002 1003 1004 1005 1006 1007 1008 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load VRRM VRMS VDC IF(AV) IFSM GGGGGGGG 50 100 150 200 300 400 500 600 35 70 105 140 210 280 350 420 50 100 150 200 300 400 500 600 10 125 Maximum instantaneous forward voltage (Note 1) IF= 5 A VF 0.975 1.3 1.7 Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR Maximum reverse recovery time (Note 2) Trr Typical junction capacitance (Note 3) Cj Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle RθJC TJ TSTG Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 1 200 35 70 50 2 - 55 to +150 - 55 to +150 Unit V V V A A V μA ns pF OC/W OC OC Document Number: DS_D1405076 Version: G14 SFS1001G thru SFS1008G Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND SFS100xG (Note 1) QUALIFIED Prefix "H" RN C0 CODE Suffix "G" Note 1: "x" defines voltage from 50V (SFS1001G) to 600V (SFS1008G) PACKAGE D2PAK D2PAK PACKING 800 / 13" Paper reel 50 / Tube EXAMPLE PREFERRED P/N SFS1008G RN SFS1008G RNG SFS1008GHRN PART NO. SFS1008G SFS1008G SFS1008G AEC-Q101 QUALIFIED H RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) PACKING CODE RN RN RN GREEN COMPOUND CODE G DESCRIPTION Green compound AEC-Q101 qualified AVERAGE FORWARD A CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 12 10 8 6 4 RESISTIVE OR INDUCTIVELOAD 2 WITH HEATSINK 0 0 25 50 75 100 CASE TEMPERATURE (oC) 125 150 INSTANTANEOUS REVERSE CURRENT (μA) 1000 FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100 10 1 0.1 0 TJ=100℃ TJ=75℃ TJ=25℃ 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PEAK FORWARD SURGE CURRENT (A) 150 120 90 60 30 0 1 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS FORWARD CURRENT (A) FIG. 4 TYPICAL FORWARD CHARACTERISRICS 100 Pulse Width=300μs 1% Duty Cycle 10 SFS1001G-SFS1004G 1 SFS1005G-SFS1006G SFS1007G-SFS1008G 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) Document Number: DS_D1405076 Version: G14 CAPACITANCE (pF) 100 90 80 70 60 50 40 1 FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p SFS1001G-SFS1004G SFS1005G-SFS1008G 10 REVERSE VOLTAGE (V) 100 PACKAGE OUTLINE DIMENSIONS SFS1001G thru SFS1008G Taiwan Semiconductor DIM. A B C D E F G H I J K Unit (mm) Min - 14.60 Max 10.5 15.88 2.41 2.67 0.68 0.94 2.29 2.79 4.44 4.70 1.14 1.40 1.14 1.40 8.25 9.25 0.36 0.53 2.03 2.79 Unit (inch) Min Max - 0.413 0.575 0.625 0.095 0.105 0.027 0.037 0.090 0.110 0.175 0.185 0.045 0.055 0.045 0.055 0.325 0.364 0.014 0.021 0.080 0.110 SUGGESTED PAD LAYOUT Symbol A B C D E F G Unit (mm) 10.8 8.3 1.1 3.5 16.9 9.5 2.5 Unit (inch) 0.425 0.327 0.043 0.138 0.665 0.374 0.098 MARKING DIAGRAM P/N G YWW F = Specific Device Code = Green Compound = Date Code = Factory Code Document Number: DS_D1405076 Version: G14 CREAT BY ART SFS1001G thru SFS1008G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infri.


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