CZT5401E
ENHANCED SPECIFICATION SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: ...
CZT5401E
ENHANCED SPECIFICATION SURFACE MOUNT
PNP SILICON
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401E is a
PNP Silicon
Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS: General purpose switching and amplification Telephone applications
FEATURES: High Collector Breakdown Voltage 250V Low Leakage Current 50nA MAX Low Saturation Voltage 150mV MAX @ 50mA Complementary Device: CZT5551E SOT-223 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage ♦ Collector-Emitter Voltage ♦ Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC PD TJ, Tstg ΘJA
250 220 7.0 600 2.0 -65 to +150 62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO ICBO IEBO
♦ BVCBO ♦ BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT)
VBE(SAT) VBE(SAT)
VCB=120V VCB=120V, TA=100°C VEB=3.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA
250 220 7.0
♦ Enhanced specification
MAX 50 50 50
100 150 1.00 1.00
UNITS V V V mA W °C
°C/W
UNITS nA μA nA V V V mV mV V V
R1 (1-March 2010)
CZT5401E
ENHANCED SPECIFICATION SURFACE MOUNT
PNP SILICON
TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise no...