CXT5551E

CXT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS: General purpose switching and amplification Telephone applications FEATURES: High Collector Breakdown Voltage: 250V Low Leakage Current: 50nA MAX Low Saturation Voltage: 100mV MAX @ 50mA Complementary Device: CXT5401E SOT-89 Surface Mount Package MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 250 220 6.0 600 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO IEBO ♦ BVCBO ♦ BVCEO BVEBO ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 250 220 6.0 ♦ Enhanced specification MAX 50 50 50 75 100 1.00 1.00 UNITS V V V mA W °C °C/W UNITS nA μA nA V V V mV mV V V R1 (23-February 2010) CXT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise not...