CMUT5551E

CMUT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: 5C1 FEATURES: SOT-523 CASE High Collector Breakdown Voltage 250V Low Leakage Current 50nA Max APPLICATIONS: Low Saturation Voltage 100mV Max @ 50mA General purpose switching and amplification Complementary Device CMUT5401E Telephone applications SOT-523 Surface Mount Package MAXIMUM RATINGS: (TA=25°C) ♦Collector-Base Voltage ♦Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 250 220 6.0 600 250 -65 to +150 500 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO IEBO ♦BVCBO ♦BVCEO BVEBO ♦VCE(SAT) ♦VCE(SAT) VBE(SAT) VBE(SAT) VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 250 220 6.0 ♦ Enhanced Specification MAX 50 50 50 75 100 1.00 1.00 UNITS nA μA nA V V V mV mV V V R1 (9-February 2010) CMUT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: ...