SWITCHING Diodes
SWITCHING DIODE WBFBP-02C Plastic-Encapsulate Diodes
VOLTAGE 90 Volts CURRENT 0.1 Ampere
DESCRIPTION Silicon Epitaxial P...
Description
SWITCHING DIODE WBFBP-02C Plastic-Encapsulate Diodes
VOLTAGE 90 Volts CURRENT 0.1 Ampere
DESCRIPTION Silicon Epitaxial Planar
FEATURES Small Surface Mounting Type High Speed High Reliability with High Surge Current Handing Capability
1SS400WB
WBFBP-02C
(1.0×0.6×0.5) unit: mm
APPLICATION High Speed Switching for Detection For Portable Equipment:(i.e. Mobile Phone,MP3, MD,CD-ROM, DVD-ROM, Note Book PC, etc.)
Moisture Sensitivity Level 1
MARKING: 7
Pb-Free package is available
RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter Peak Reverse Voltage DC Reverse Voltage Peak Forward Current Mean Rectifying Current Surge Current @t=1s Junction Temperature 2SHUDWLQJStorage Temperature
Symbol VRM VR IFM IO Isurge Tj Tstg
Value 90 80 225 100 500 150
-55~+150
Unit
V V mA mA mA ℃ ℃
Electrical Ratings @Ta=25℃
Parameter
Symbol Min Typ Max Unit
Conditions
Forward voltage Reverse current
VF
1.2 V
IF=100mA
IR
0.1 μA
VR=80V
Capacitance between terminals
CT
3.0 pF
VR=0.5V, f=1MHz
Reverse recovery time
trr
4 ns VR=6V,IF=10mA,RL=100Ω
2011.11
WILLAS ELECTRONIC CORP.
SURGE CURRENT, ISURGE (A)
JUNCTION CAPACITANCE, (pF)
1SS400WB
RATING CHARACTERISTIC CURVES ( 1SS400WB )
FIG. 1 - SURGE CURRENT CHARACTERISTICS 100
PULSE 50 Single pulse
20
10 5
2
1 0.1 1
10
100
1000
10000
PULSE WIDTH , TW (mS)
FORWARD CURRENT, (A) Ta=T7a5=1oC25 oC Ta=T-a2=52o5C ...
Similar Datasheet