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STTH8R03DJF Dataheets PDF



Part Number STTH8R03DJF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Ultrafast recovery diode high efficiency
Datasheet STTH8R03DJF DatasheetSTTH8R03DJF Datasheet (PDF)

Product status STTH8R03DJF Product summary IF(AV) 8A VRRM 300 V Tj(max.) 175 °C VF(typ.) 0.8 V trr(typ.) 27 ns STTH8R03DJF Datasheet 300 V, 8 A ultrafast recovery diode high efficiency Features • Suited for DC/DC converts • Low losses • High Tj • High surge current capability • High energy avalanche capability • Thin package: 1 mm • ECOPACK2 compliant Applications • Switching diode • SMPS • DC/DC converter • Telecom power Description High performance diode suited for hig.

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Product status STTH8R03DJF Product summary IF(AV) 8A VRRM 300 V Tj(max.) 175 °C VF(typ.) 0.8 V trr(typ.) 27 ns STTH8R03DJF Datasheet 300 V, 8 A ultrafast recovery diode high efficiency Features • Suited for DC/DC converts • Low losses • High Tj • High surge current capability • High energy avalanche capability • Thin package: 1 mm • ECOPACK2 compliant Applications • Switching diode • SMPS • DC/DC converter • Telecom power Description High performance diode suited for high frequency DC to DC converters. Packaged in PowerFLAT 5x6, the STTH8R03DJF is optimized for use in low voltage high frequency inverters. DS8873 - Rev 2 - February 2023 For further information contact your local STMicroelectronics sales office. www.st.com STTH8R03DJF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short circuited) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current TC = 155 °C, δ = 0.5, square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature Value Unit 300 V 45 A 8 A 280 A -65 to +175 °C 175 °C Symbol Rth(j-c) Table 2. Thermal parameters Parameter Junction to case Max. value 2.0 Unit °C/W For more information, please refer to the following application note: • AN5046: Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages Table 3. Static electrical characteristics (anode terminals short circuited) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% Test conditions Tj = 25 °C Tj = 125 °C VR = 300 V Tj = 25 °C Tj = 125 °C IF = 8 A Min. Typ. Max. Unit - 40 µA - 20 200 - 1.08 1.3 V - 0.8 1.0 To evaluate the conduction losses use the following equation: P = 0.84 x IF(AV) + 0.02 IF 2 (RMS) Table 4. Recovery characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 1 A, VR = 30 V, dIF/dt = 100 A/μs IF = 1 A, VR = 30 V, dIF/dt = 50 A/μs - 27 35 ns - 38 50 IRM Reverse recovery current - 6.0 8.0 A Sfactor Reverse recovery softness factor Tj = 125 °C IF = 8 A, VCC = 200 V, dIF/dt = - 200 A/μs - 0.3 - Qrr Reverse recovery charges - 120 nC For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses in a power diode DS8873 - Rev 2 page 2/10 STTH8R03DJF Characteristics Table 5. Turn-on switching characteristics Symbol Parameter tfr Forward recovery time VFP Forward recovery voltage Test conditions Tj = 25 °C IF = 8 A, VFR = 1.5 V, dIF/dt = 100 A/μs Min. Typ. Max. Unit - 150 ns - 2.1 3.2 V DS8873 - Rev 2 page 3/10 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current PF(av)(w) 12 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 10 8 6 4 2 IF(av)(A) 0 0 1 2 3 4 5 6 7 8 9 10 STTH8R03DJF Characteristics (curves) Figure 2. Forward voltage drop versus forward current 100 IFM(A) Tj = 125°C (typical values) 10 Tj = 125°C (maximum values) Tj = 125°C (typical values) 1.0 VFM(V) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1 .0 0 .9 0 .8 0 .7 0 .6 0 .5 0 .4 0 .3 0 .2 Single pulse 0 .1 0 .0 1 .E -0 4 1 .E -0 3 1 .E -0 2 1 .E -0 1 tP(S) 1 .E + 0 0 Figure 4. Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 12 IF = IF(AV) 10 VR = 200 V Tj = 125 °C 8 6 4 2 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 5. Reverse recovery time versus dIF/dt (typical values) TRR(ns) 100 90 IF = IF(AV) VR = 200 V 80 Tj = 125 °C 70 60 50 40 30 20 10 0 0 dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Figure 6. Reverse recovery charges versus dIF/dt (typical values) QRR(nC) 180 160 IF = IF(AV) VR = 200 V 140 Tj = 125 °C 120 100 80 60 40 20 0 0 dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 DS8873 - Rev 2 page 4/10 STTH8R03DJF Characteristics (curves) Figure 7. Softness factor versus dIF/dt (typical values) SFACTOR 0.6 IF = IF(AV) 0.5 VR = 200 V Tj = 125 °C 0.4 0.3 0.2 0.1 0.0 0 dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Figure 9. Transient peak forward voltage versus dIF/dt (typical values) VPP(V) 5 IF = IF(AV) Tj = 125 °C 4 3 2 1 0 0 dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Figure 8. Relative variations of dynamic parameters versus junction temperature 2 .7 5 2 .5 0 2 .2 5 2 .0 0 1 .7 5 1 .5 0 1 .2 5 .


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