Document
Product status STTH8R03DJF
Product summary
IF(AV)
8A
VRRM
300 V
Tj(max.)
175 °C
VF(typ.)
0.8 V
trr(typ.)
27 ns
STTH8R03DJF
Datasheet
300 V, 8 A ultrafast recovery diode high efficiency
Features
• Suited for DC/DC converts
• Low losses
•
High Tj
• High surge current capability
• High energy avalanche capability
• Thin package: 1 mm
• ECOPACK2 compliant
Applications
• Switching diode • SMPS • DC/DC converter • Telecom power
Description
High performance diode suited for high frequency DC to DC converters.
Packaged in PowerFLAT 5x6, the STTH8R03DJF is optimized for use in low voltage high frequency inverters.
DS8873 - Rev 2 - February 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STTH8R03DJF
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short circuited)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
TC = 155 °C, δ = 0.5, square wave
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
Tstg Storage temperature range
Tj
Maximum operating junction temperature
Value
Unit
300
V
45
A
8
A
280
A
-65 to +175 °C
175
°C
Symbol Rth(j-c)
Table 2. Thermal parameters Parameter Junction to case
Max. value 2.0
Unit °C/W
For more information, please refer to the following application note:
•
AN5046: Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages
Table 3. Static electrical characteristics (anode terminals short circuited)
Symbol
Parameter
IR (1)
Reverse leakage current
VF (2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C Tj = 125 °C
VR = 300 V
Tj = 25 °C Tj = 125 °C
IF = 8 A
Min. Typ. Max. Unit
-
40
µA
-
20
200
-
1.08
1.3
V
-
0.8
1.0
To evaluate the conduction losses use the following equation: P = 0.84 x IF(AV) + 0.02 IF 2 (RMS)
Table 4. Recovery characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr Reverse recovery time
Tj = 25 °C
IF = 1 A, VR = 30 V, dIF/dt = 100 A/μs IF = 1 A, VR = 30 V, dIF/dt = 50 A/μs
- 27 35 ns
- 38 50
IRM Reverse recovery current
- 6.0 8.0 A
Sfactor Reverse recovery softness factor Tj = 125 °C IF = 8 A, VCC = 200 V, dIF/dt = - 200 A/μs - 0.3
-
Qrr Reverse recovery charges
- 120
nC
For more information, please refer to the following application notes related to the power losses:
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses in a power diode
DS8873 - Rev 2
page 2/10
STTH8R03DJF
Characteristics
Table 5. Turn-on switching characteristics
Symbol
Parameter
tfr
Forward recovery time
VFP Forward recovery voltage
Test conditions Tj = 25 °C IF = 8 A, VFR = 1.5 V, dIF/dt = 100 A/μs
Min. Typ. Max. Unit
-
150 ns
- 2.1 3.2 V
DS8873 - Rev 2
page 3/10
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus average forward current
PF(av)(w)
12
δ = 0.05 δ = 0.1
δ = 0.2
δ = 0.5 δ = 1
10
8
6
4
2
IF(av)(A)
0
0
1
2
3
4
5
6
7
8
9
10
STTH8R03DJF
Characteristics (curves)
Figure 2. Forward voltage drop versus forward current
100 IFM(A)
Tj = 125°C (typical values)
10
Tj = 125°C
(maximum values)
Tj = 125°C (typical values)
1.0
VFM(V)
0.0 0.0 0.2
0.4
0.6
0.8 1.0
1.2
1.4 1.6 1.8
2.0 2.2
Figure 3. Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c)/Rth(j-c) 1 .0
0 .9
0 .8
0 .7
0 .6
0 .5
0 .4
0 .3
0 .2
Single pulse
0 .1
0 .0 1 .E -0 4
1 .E -0 3
1 .E -0 2
1 .E -0 1
tP(S) 1 .E + 0 0
Figure 4. Peak reverse recovery current versus dIF/dt (typical values)
IRM(A) 12
IF = IF(AV)
10
VR = 200 V
Tj = 125 °C
8
6
4
2
dIF/dt(A/µs) 0
0
50
100 150 200 250 300 350 400 450 500
Figure 5. Reverse recovery time versus dIF/dt (typical values)
TRR(ns) 100
90
IF = IF(AV)
VR = 200 V
80
Tj = 125 °C
70
60
50
40
30
20
10
0 0
dIF/dt(A/µs)
50
100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery charges versus dIF/dt (typical values)
QRR(nC) 180
160
IF = IF(AV)
VR = 200 V
140
Tj = 125 °C
120 100
80
60
40 20
0 0
dIF/dt(A/µs)
50
100 150 200 250 300 350 400 450 500
DS8873 - Rev 2
page 4/10
STTH8R03DJF
Characteristics (curves)
Figure 7. Softness factor versus dIF/dt (typical values)
SFACTOR 0.6
IF = IF(AV)
0.5
VR = 200 V
Tj = 125 °C
0.4
0.3
0.2
0.1
0.0 0
dIF/dt(A/µs)
50
100 150 200 250 300 350 400 450 500
Figure 9. Transient peak forward voltage versus dIF/dt (typical values)
VPP(V) 5
IF = IF(AV) Tj = 125 °C 4
3
2
1
0 0
dIF/dt(A/µs)
50
100 150 200 250 300 350 400 450 500
Figure 8. Relative variations of dynamic parameters versus junction temperature
2 .7 5 2 .5 0 2 .2 5 2 .0 0 1 .7 5 1 .5 0 1 .2 5 .