STTH1008DTI

KA A K TO-220AC ins STTH1008DTI Table 1. Device summary IF(AV) 10 A IFRM 20 A VRRM 800 V trr 40 ns IRM 8.5 A VF 1.7 V Tj 150 °C STTH1008DTI 800 V tandem hyperfast diode Datasheet  production data Features  High voltage rectifier  Tandem diodes in series  Very low switching losses  Insulated device with internal ceramic  Equal thermal conditions for both 400 V diodes  Static and dynamic equilibrium of internal diodes are warranted by design Description The STTH1008DTI is an ultrahigh performance diode composed of two 400 V dice in series. March 2013 This is information on a product in full production. DocID023113 Rev 1 1/9 www.st.com 9 Characteristics 1 Characteristics STTH1008DTI Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current,  = 0.5 Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum junction temperature Tc = 85 °C Tc = 135 °C, = 0.3 tp = 10 ms sinusoidal 800 16 10 20 120 -65 to +175 150 V A A A A °C °C Symbol Rth(j-c) Table 3. Thermal resistance Parameter Junction to case Value 2.5 Unit °C/W Table 4. Static electrical characteristics Symbol Parameters Test conditions Min. Typ Max. Unit IR(1) Reverse leakage current VF(2) Forward voltage drop 1. Pulse test: tP = 5 ms,  < 2% 2. Pulse test: tP =...