DatasheetsPDF.com

MBRS10100CT-Y Dataheets PDF



Part Number MBRS10100CT-Y
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
Datasheet MBRS10100CT-Y DatasheetMBRS10100CT-Y Datasheet (PDF)

MBRS1045CT-Y thru MBRS10150CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL fla.

  MBRS10100CT-Y   MBRS10100CT-Y


Document
MBRS1045CT-Y thru MBRS10150CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.37 g (approximately) TO-263AB (D2PAK) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) MBRS MBRS MBRS MBRS PARAMETER SYMBOL 1045 1060 10100 10150 CT-Y CT-Y CT-Y CT-Y Marking code MBRS MBRS MBRS MBRS 1045CT 1060CT 10100CT 10150CT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak repetitive forward current (Rated VR, Square wave, 20KHz) VRRM VRMS VDC IF(AV) IFRM 45 31 45 60 100 42 70 60 100 10 10 150 105 150 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF= 5 A, TJ=25oC IF= 5 A, TJ=125oC IF= 10 A, TJ=25oC IF= 10 A, TJ=125oC Maximum reverse current @ rated VR TJ=25oC TJ=100oC TJ=125oC Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IFSM IRRM VF IR dV/dt RθJC TJ TSTG 120 1 0.70 0.80 0.85 0.88 0.57 0.65 0.75 0.78 0.80 0.90 0.95 0.98 0.67 0.75 0.85 0.88 0.1 15 10 - -5 10000 2 - 55 to +150 - 55 to +150 Unit V V V A A A A V mA V/μs OC/W OC OC Document Number: DS_D1407034 Version: A14 MBRS1045CT-Y thru MBRS10150CT-Y Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE PACKAGE SUFFIX MBRS10xxCT-Y (Note 1) RN C0 G D2PAK D2PAK Note 1: "xx" defines voltage from 45V (MBRS1045CT-Y) to 150V (MBRS10150CT-Y) PACKING 800 / 13" Paper reel 50 / Tube EXAMPLE PREFERRED P/N PART NO. MBRS1060CT-Y RN MBRS1060CT-Y MBRS1060CT-Y RNG MBRS1060CT-Y PACKING CODE RN RN PACKING CODE SUFFIX G DESCRIPTION Green compound AVERAGE FORWARD A CURRENT (A) RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 12 10 8 6 4 2 RESISTIVE OR INDUCTIVELOAD 0 50 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE (oC) PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 180 150 8.3ms Single Half Sine Wave 120 90 60 30 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS FORWARD A CURRENT (A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG 100 MBRS1045CT-Y 10 MBRS1060CT-Y 1 MBRS10150CT-Y MBRS10100CT-Y 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FORWARD VOLTAGE (V) INSTANTANEOUS REVERSE A CURRENT (mA) FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 45CT-Y - 60CT-Y 100CT-Y - 150CT-Y 10 1 TJ=125oC 0.1 TJ=75oC 0.01 0.001 0 TJ=25oC 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1407034 Version: A14 JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE A (℃/W) 1000 900 800 700 600 500 400 300 200 100 0 0.1 FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p 1 10 REVERSE VOLTAGE (V) 100 PACKAGE OUTLINE DIMENSIONS TO-263AB (D2PAK) SUGGESTED PAD LAYOUT MBRS1045CT-Y thru MBRS10150CT-Y Taiwan Semiconductor FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 10 1 0.1 0.01 0.1 1 10 T-PULSE DURATION(s) 100 DIM. A B C D E F G H I J K Unit (mm) Min Max - 10.5 14.60 15.88 2.41 2.67 0.68 0.94 2.29 2.79 4.44 4.70 1.14 1.40 1.14 1.40 8.25 9.25 0.36 0.53 2.03 2.79 Unit (inch) Min Max - 0.413 0.575 0.625 0.095 0.105 0.027 0.037 0.090 0.110 0.175 0.185 0.045 0.055 0.045 0.055 0.325 0.364 0.014 0.021 0.080 0.110 Symbol A B C D E F G Unit (mm) 10.8 8.3 1.1 3.5 16.9 9.5 2.5 Unit (inch) 0.425 0.327 0.043 0.138 0.665 0.374 0.098 MARKING DIAGRAM P/N G YWW F = Marking Code = Green Compound = Date Code = Factory Code Document Number: DS_D1407034 Version: A14 CREAT BY ART MBRS1045CT-Y thru MBRS10150CT-Y Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and discla.


MBRS1060CT-Y MBRS10100CT-Y MBRS10150CT-Y


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)