D44E3

D44E1 D44E2 D44E3 SILICON NPN DARLINGTON POWER TRANSISTORS TO-220 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D44E series devices are silicon NPN Darlington power transistors, manufactured by the epitaxial base process, with 2 integrated resistors and 1 diode for stability and protection. These devices are designed for switching and output applications where high gain is desired. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEO VCES VEBO IC IB PD TJ, Tstg ΘJC D44E1 D44E2 D44E3 40 60 80 40 60 80 7.0 10 1.0 80 -65 to +150 1.56 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=Rated VCES IEBO VEB=7.0V BVCEO IC=100mA (D44E1) 40 BVCEO IC=100mA (D44E2) 60 BVCEO IC=100mA (D44E3) 80 VCE(SAT) IC=5.0A, IB=10mA VCE(SAT) IC=10A, IB=20mA VBE(SAT) IC=5.0A, IB=10mA hFE VCE=5.0V, IC=5.0A 1000 Cob VCB=10V, IE=0, f=1.0MHz ton IC=10A, IB1=20mA 1.0 toff IC=10A, IB1=IB2=20mA 2.5 MAX 500 5.0 1.5 3.0 2.5 200 UNITS V V V A A W °C °C/W UNITS μA mA V V V V V V pF μs μs R1 (4-March 2014) D44E1 D44E2 D44E3 SILICON NPN DARLINGTON POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER w w...