2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
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2N6050 2N6051 2N6052
PNP 2N6057 2N6058 2N6059
NPN
COMPLEMENTARY SILICON DARLINGTON POWER
TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power
transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IB PD TJ, Tstg JC
2N6050 2N6057
60
60
2N6051 2N6058
80 80 5.0 12 20 0.2 150 -65 to +200 1.17
2N6052 2N6059
100
100
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA, (2N6050, 2N6057)
60
BVCEO
IC=100mA, (2N6051, 2N6058)
80
BVCEO
IC=100mA, (2N6052, 2N6059)
100
VCE(SAT) IC=6.0A, IB=24mA
VCE(SAT) IC=12A, IB=120mA
VBE(SAT) IC=12A, IB=120mA
VBE(ON)
VCE=3.0V, IC=6.0A
hFE VCE=3.0V, IC=6.0A
750
hFE VCE=3.0V, IC=12A
100
hfe VCE=3.0V, IC=5.0A, f=1.0kHz
300
fT VCE=3.0V, IC=5.0A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=100kHz (
PNP types)
Cob VCB=10V, IE=0, f=100kHz (
NPN types)
MAX 0.5 5.0 1.0 2.0
2.0 3.0 4.0 2.8 18K
500 300
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