K4174

Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Power MOS FETs This product complies with the RoHS Directive (EU 2002/95/EC). 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits  Features  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ  High-speed switching: tf = 90 ns (typ.)  Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current * Avalanche energy capability VDSS VGSS ID IDP EAS 110 ±25 ±28 ±130 216 V V A A mJ Avalanche energy capability * EAR 69 mJ 40 W Drain power dissipation Ta = 25°C PD 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively.  Package  Code TO-220D-A1  Pin Name 1: Gate 2: Drain 3: Source  Marking Symbol: K4174  Internal Connection D G S T ≤ 5.0 µs, On-duty ≤ 20%  Electrical Characteristics TC = 25°C±3°C Parameter Symbol Conditions Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current VDSS IDSS IGSS ID = 1 mA, ...