DatasheetsPDF.com

PYX28HC64

PYRAMID

STATIC CMOS RAM

FEATURES Access Times of 70, 90, and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: ...


PYRAMID

PYX28HC64

File Download Download PYX28HC64 Datasheet


Description
FEATURES Access Times of 70, 90, and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 200 µA Standby Current Fast Write Cycle Times PYX28HC64 8K x 8 EEPROM Software Data Protection Fully TTL Compatible Inputs and Outputs Endurance: 100,000 Cycles Data Retention: 100 Years Available in the following packages: – 32-Pin Ceramic LCC (450 x 550 mils) – 28-Pin 600 mil Ceramic DIP DESCRIPTION The PYX28HC64 is a 5 Volt 8Kx8 EEPROM using floating gate CMOS Technology. The device supports 64-byte page write operation. The PYX28HC64 features DATA and Toggle Bit Polling as well as a system software scheme used to indicate early completion of a Write Cycle. The device also includes user-optional software data protection. Endurance is 100,000 Cycles and Data Retention is 100 Years. The device is available in a 32-Pin LCC package as well as a 28-Pin 600 mil wide Ceramic DIP. Pin ConfigurationS Functional Block Diagram DIP (C5-1) Document # EEPROM107 REV OR LCC (L6) Revised August 2011 PYX28HC64 - 8K x 8 EEPROM Maximum Ratings(1) RECOMMENDED OPERATING CONDITIONS Sym Parameter VCC VTERM Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) TA Operating Temperature TBIAS Temperature Under Bias TSTG Storage Temperature PT Power Dissipation IOUT DC Output Current Value -0.3 to +6.25 -0.5 to +6.25 -55 to +125 -55 to +125 -65 to +150 1.0 50 Unit V V °C °C °C W mA Grade...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)