STATIC CMOS RAM
FEATURES
Access Times of 70, 90, and 120ns Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS: ...
Description
FEATURES
Access Times of 70, 90, and 120ns Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS: - 40 mA Active Current - 200 µA Standby Current
Fast Write Cycle Times
PYX28HC64
8K x 8 EEPROM
Software Data Protection Fully TTL Compatible Inputs and Outputs Endurance: 100,000 Cycles Data Retention: 100 Years Available in the following packages: – 32-Pin Ceramic LCC (450 x 550 mils) – 28-Pin 600 mil Ceramic DIP
DESCRIPTION
The PYX28HC64 is a 5 Volt 8Kx8 EEPROM using floating gate CMOS Technology. The device supports 64-byte page write operation. The PYX28HC64 features DATA and Toggle Bit Polling as well as a system software scheme used to indicate early completion of a Write Cycle. The device also includes user-optional software data protection. Endurance is 100,000 Cycles and Data Retention is 100 Years. The device is available in a 32-Pin LCC package as well as a 28-Pin 600 mil wide Ceramic DIP.
Pin ConfigurationS
Functional Block Diagram
DIP (C5-1)
Document # EEPROM107 REV OR
LCC (L6) Revised August 2011
PYX28HC64 - 8K x 8 EEPROM
Maximum Ratings(1)
RECOMMENDED OPERATING CONDITIONS
Sym Parameter
VCC VTERM
Power Supply Pin with Respect to GND
Terminal Voltage with Respect to GND (up to 7.0V)
TA Operating Temperature
TBIAS Temperature Under Bias
TSTG Storage Temperature
PT Power Dissipation
IOUT DC Output Current
Value -0.3 to +6.25
-0.5 to +6.25
-55 to +125 -55 to +125 -65 to +150
1.0 50
Unit V
V
°C °C °C W mA
Grade...
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