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PYA28C16B

PYRAMID

EEPROM


Description
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Byte Write Cycle Time - 10 ms Maximum Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs PYA28C16B 2K X 8 EEPROM Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (opt...



PYRAMID

PYA28C16B

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