STATIC CMOS RAM
P4C423 HIGH SPEED 256 x 4 STATIC CMOS RAM
FEATURES
High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Co...
Description
P4C423 HIGH SPEED 256 x 4 STATIC CMOS RAM
FEATURES
High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military)
CMOS for Low Power – 495 mW Max. – 10/12/15/20/25 (Commercial) – 495 mW Max. – 15/20/25/35 (Military)
Single 5V±10% Power Supply
Separate I/O
Fully TTL Compatible Inputs and Outputs
Resistant to single event upset and latchup resulting from advanced process and design improvements
Standard 24-pin 300 mil DIP package.
DESCRIPTION
The P4C423 is a 1,024-bit high-speed (10ns) Static RAM with a 256 x 4 organization. The memory requires no clocks or refreshing and has equal access and cycle times. Inputs and outputs are fully TTL compatible. Operation is from a single 5 Volt supply. Easy memory expansion is provided by an active LOW chip select one (CS1) and active HIGH chip select two (CS2) as well as 3-state outputs.
In addition to high performance and high density, the device features latch-up protection, single event and upset protection. The P4C423 is offered in a 24-pin 300 mil DIP. Devices are offered in both commercial and military temperature ranges.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (C4)
Document # SRAM108 REV OR Revised October 2005
1
P4C423
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC Power Supply Pin with Respect to GND
VTERM
Terminal Voltage with Respect to GND (up to 7.0V)
TA Operating Temperature
Value Unit – 0.5 to +7 V
– 0.5 to VCC +0.5
V
– 55 to +125 °C
RECOMMENDED OPERATING CONDIT...
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