KDS135S

SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. FEATURES High Reliability. Small surface mounting type (SOT-23). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING VRM VR 300 250 IFM 300 IO 100 IFSM 2 PD 150 Tj 150 Tstg -55 150 UNIT V V mA mA A mW KDS135S SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. NC 2. ANODE 3. CATHODE 3 21 SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF IR(1) IR(2) CT trr TEST CONDITION IF=100mA VR=250V VR=300V VR=0V, f=1MHz IR=30mA, IF=30mA MIN. - TYP. 1.0 0.04 1.35 30 MAX. 1.2 0.2 100 3 100 UNIT V A pF nS Marking J AType Name Lot No. 2001. 6. 11 Revision No : 0 1/2 KDS135S 2001. 6. 11 Revision No : 0 2/2 ...