KDR582F

SEMICONDUCTOR TECHNICAL DATA FOR HIGH SPEED SWITCHING. KDR582F SCHOTTKY BARRIER TYPE DIODE FEATURES Low reverse current, low capacitance. CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VR 5 V IO 10 mA IFSM 130 mA PD* 100 mW Tj 150 Storage Temperature Range Tstg -55 150 * Mounted on a glass epoxy circuit board of 20 20 , Pad Dimension of 4 4 B DIM MILLIMETERS A 1.00+_ 0.05 A B 0.80+0.10/-0.05 C 0.60+_ 0.05 D 0.30+_ 0.05 E 0.40 MAX F 0.13+_ 0.05 1. ANODE 2. CATHODE TFSC Marking Type Name M ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current Total Capacitance Series Resistance IR CT rS TEST CONDITION IF=0.1mA IF=1mA IF=10mA VR=3V VR=3V, TA=60 VR=0V, f=1MHz IF=5mA, f=10kHz MIN. 0.2 0.25 0.35 0.4 - TYP. - MAX. 0.35 0.45 0.6 0.25 1.25 0.75 15 UNIT V A pF 2012. 6. 22 Revision No : 0 1/2 Total Capacitance CT (pF) KDR582F CT - VR 1.0 f=1MHz 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 Reverse Voltage VR (V) VF - IF 100 f=1MHz 10-1 10-2 0 0.1 0.2 0.3 0.4 0.5 Forward Voltage VF (V) Reverse Current IR (µA) IR - VR 103 102 101 Ta=25 C 100 0 2 4 6 8 10 Reverse Current VR (V) Forward Current IF (mA) 2012. 6. 22 Revision No : 0 2/2 ...