SEMICONDUCTOR
TECHNICAL DATA
KDR412
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY.
FE...
SEMICONDUCTOR
TECHNICAL DATA
KDR412
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY.
FEATURES Small Surface Mounting Type. (USC) Low Forward Voltage : VF max=0.5V High Reliability
CONSTRUCTION Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Peak Reverse Voltage DC Reverse Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range
SYMBOL VRM VR IO IFSM Tj Tstg
RATING 40 20 0.5 3 125
-40 +125
UNIT V V A A
CATHODE MARK E A K
F L
B 1
2 D
MM 1. ANODE 2. CATHODE
G
H
J C I
DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30 +_ 0.06 E 1.70 +_ 0.05 F 0.27 +_ 0.10 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4 L 2 +4/-2 M 4~6
USC
Marking
Lot No.
Type Name
U3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage Reverse Current
VF (1) VF (2)
IR
Total Capacitance
CT
TEST CONDITION IF=10mA IF=500mA VR=10V VR=10V, f=1MHz
MIN. -
TYP. 20
MAX. 0.3 0.5 30 -
UNIT V V A pF
2014. 3. 31
Revision No : 4
1/2
FORWARD CURRENT IF (A)
TTaaT==Ta-2a=25=75152CC5C C
KDR412
IF - VF
1
100m
10m
1m
100µ 0
0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE VF (V)
CT - VR
1K Ta=25 C f=1MHz
100
10
1 0 10 20 30
REVERSE VOLTAGE VR (V)
40
REVERSE CURRENT IR (A)
10m 1m
100µ
IR - VR
Ta=125 C Ta=75 C
10µ Ta=25 C
1µ 0 5 10 15 20 25 30 35
REVERSE VOLTAGE VR (V)
TOTAL CAPACITANCE CT (pF)
2014. 3. 31
Revision No : 4
2/2
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