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HRP30N04K Dataheets PDF



Part Number HRP30N04K
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HRP30N04K DatasheetHRP30N04K Datasheet (PDF)

HRP30N04K HRP30N04K 40V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 200 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 40 V RDS(on) typ = 2.5mΩ ID = 230 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EA.

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HRP30N04K HRP30N04K 40V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 200 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 40 V RDS(on) typ = 2.5mΩ ID = 230 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 40 230 160 805 ±20 5750 25 250 1.67 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 Units V A A A V mJ mJ W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.6 -62.5 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRP30N04K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 30 A 2.0 -- gFS Forward Transconductance Off Characteristics VDS = 20, ID = 30 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 ㎂ VDS = 32 V, VGS = 0 V VDS = 32 V, TJ = 125℃ VGS = ±20 V, VDS = 0 V 40 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz ----- td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 20 V, ID = 30 A, RG = 6 Ω VDS = 32 V, ID = 30 A, VGS = 10 V -------- Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 25 A, VGS = 0 V diF/dt = 50 A/μs ------ -- 3.6 V 2.5 3.0 mΩ 90 -- S -- -- V -- 1 ㎂ -- 100 ㎂ -- ±100 ㎁ 7800 1800 1300 2 ----- ㎊ ㎊ ㎊ Ω 100 -150 -220 -140 -200 -30 -90 -- ㎱ ㎱ ㎱ ㎱ nC nC nC -- 230 A -- 805 -- 1.3 V 60 -- ㎱ 30 -- nC Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=38A, VDD=35V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRP30N04K Typical Characteristics DS(ON)R [mΩ], Drain-Source On-Resistance ID, Drain Current [A] V GS Top : 15 V 10 V 8V 7V 6V 5.5 V 5V Bottom : 4.5 V * Notes : 1. 300us Pulse Test 2. T = 25oC C 100 101 VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics 3.2 VGS = 10V 3.0 2.8 2.6 2.4 ∗ Note : TJ = 25oC 2.2 0 100 200 300 400 500 ID, Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 14000 12000 10000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd C =C rss gd Ciss 8000 6000 4000 2000 Coss * Note ; Crss 1. VGS = 0 V 2. f = 1 MHz 0 10-1 100 101 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] IDR, Reverse Drain Current [A] ID, Drain Current [A] 100 10 175oC 25oC 1 * Notes : 1. VDS= 20V 2. 300us Pulse Test 0.1 0 2 4 6 8 10 VGS, Gate-Source Voltage [V] Figure 2. Transfer Characteristics 100 10 1 0.1 0.0 175oC 25oC * Notes : 1. VGS= 0V 2. 300us Pulse Test 0.4 0.8 1.2 1.6 VSD, Source-Drain Voltage [V] 2.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 10 8 6 4 2 VDS = 32V I = 30A D 0 0 30 60 90 120 150 180 210 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,December 2014 Capacitances [pF] HRP30N04K Typical Characteristics (continued) BVDSS, (Normalized) Drain-Source Breakdown Voltage ID, Drain Current [A] 1.2 2.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.1 1.5 1.0 1.0 0.9 0.8 -100 ∗ Note : 1. VGS = 0 V 2. ID = 250µA -50 0 50 100 150 T , Junction Temperature [oC] J 200 Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area 103 is Limited by R DS(on) 100 µs 1 ms 102 10 ms DC 101 100 10-1 10-2 10-1 * Notes : 1. TC = 25 oC 2. T = 175 oC J 3. Single Pulse 100 101 VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area ID, Drain Current [A] 0.5 0.0 -100 ∗ Note : 1. VGS = 10 V 2. I = 30 A D -50 0 50 100 150 TJ, Junction Temperature [oC] 200 Figure 8. On-Resistance Variation vs Temperature 240 180.


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