N-Channel MOSFET
HRLF125N06K
HRLF125N06K
60V N-Channel Trench MOSFET
FEATURES
BVDSS = 60 V ID = 70 A Unrivalled Gate Charge : 50 n...
Description
HRLF125N06K
HRLF125N06K
60V N-Channel Trench MOSFET
FEATURES
BVDSS = 60 V ID = 70 A Unrivalled Gate Charge : 50 nC (Typ.) Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested
December 2014
8DFN 5x6 1
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
TJ, TSTG TL
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25℃) Power Dissipation (TA = 25℃) Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
60 70 * 49 * 245 * ±25 145 7.5 75 2.4 -55 to +175
300
* Drain current limited by maximum junction temperature
Units V A A A V mJ mJ W W ℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJA RθJC
Junction-to-Ambient Junction-to-Case
Typ. ---
Max. 62 2.0
Units ℃/W
◎ SEMIHOW REV.A0,December 2014
HRLF125N06K
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 15, ID = 15 A
1.0 ----
BVDSS IDSS IG...
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