HRLE550P03K

HRLE550P03K HRLE550P03K -30V P-Channel MOSFET FEATURES ‰ Super High Dense Cell Design ‰ Reliable and Rugged ‰ Lower RDS(ON) : 55 Pȍ (Max.) @VGS=-10V ‰ Lower RDS(ON) : 65 Pȍ (Max.) @VGS=-4.5V ‰ Lower RDS(ON) : 100 Pȍ (Max.) @VGS=-2.5V ‰ 100% Avalanche Tested Feb 2015 BVDSS = - 30 V RDS(on)max = 55 Pȍ ID = - 4 A SOT-23 D S G Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ Power Dissipation TA = 25୅ TA = 100୅ Operating and Storage Temperature Range -30 ρ12 -4 -3.1 -12 1.4 0.6 -55 to +150 Units V V A A A W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJA Junction-to-Ambient Typ. -- Max. 95 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͦ͑͢͡ HRLE550P03K Electrical Characteristics TA=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON)1 On-Resistance VDS = VGS, ID = -250 Ꮃ VGS = -10 V, ID = -4 A VGS = -4.5 V, ID = -3 A VGS = -2.5 V, ID = -2 A -1.0 ---- Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = -250 Ꮃ VDS = -24 V, VGS = 0 V VDS = -24 V, TJ = 70୅ VGS = ρ12 V, VDS = 0 V -30 ---- Dynamic Characteristics 2 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate R...