HRLD1B8N10K

HRLD1B8N10K_HRLU1B8N10K HRLD1B8N10K / HRLU1B8N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 11.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 140 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 185 Pȍ (Typ.) @VGS=4.5V ‰ Built-in ESD Diode ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = Pȍ ID = 2.7 A D-PAK I-PAK 2 1 1 32 3 HRLD1B8N10K HRLU1B8N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 70୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Power Dissipation (TA = 25୅)* Power Dissipation (TC = 25୅) - Derate above 25୅ 100 2.7 2.1 10.0 ρ16 22 2.7 2.5 33 0.26 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 3.8 50 110 Units V A A A V mJ A W W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͦ͑͢͡ HRLD1B8N10K_HRLU1B8N10K Electrical Characteristics TJ=25 qC unless otherw...