N-Channel MOSFET
HRLD150N10K_HRLU150N10K
HRLD150N10K / HRLU150N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Supe...
Description
HRLD150N10K_HRLU150N10K
HRLD150N10K / HRLU150N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V 100% Avalanche Tested
Jan 2015
BVDSS = 100 V RDS(on) typ = 13 Pȍ
ID = 70 A
D-PAK I-PAK
2
1 1
32 3
HRLD150N10K HRLU150N10K 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25) - Derate above 25
100 70 * 49 * 245 * ρ20 265 11
3 110 0.73
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
* Drain current limited by maximum junction temperature
Units V A A A V mJ mJ W W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.4 50 110
Units /W
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HRLD150N10K_HRLU150N10K
Ele...
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