HRF140N06K

HRF140N06K HRF140N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 40 A  Unrivalled Gate Charge : 40 nC (Typ.)  Lower RDS(ON) : 11.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) Power Dissipation (TA = 25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 60 40 * 28 * 140 * ±20 145 3.3 33 2.4 -55 to +175 300 * Drain current limited by maximum junction temperature Units V A A A V mJ mJ W W ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJA RθJC Junction-to-Ambient Junction-to-Case Typ. --- Max. 62 4.5 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRF140N06K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 15 A 2.2 -- gFS Forward Transconductance Off Characteristics VDS = 20, ID = 15 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curr...