N-Channel MOSFET
HRD72N06K_HRU72N06K
HRD72N06K / HRU72N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Aval...
Description
HRD72N06K_HRU72N06K
HRD72N06K / HRU72N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.8 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
Jan 2015
BVDSS = 60 V RDS(on) typ = 5.8mΩ ID = 100 A
D-PAK I-PAK
2
1 3
HRD72N06K
1
2 3
HRU72N06K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25℃)*
Power Dissipation (TC = 25℃) - Derate above 25℃
60 100 * 70 * 350 * ±25 415
11 3 110 0.73
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
* Drain current limited by maximum junction temperature
Units V A A A V mJ mJ W W
W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.4 50 110
Units ℃/W
◎ SEMIHOW REV.A0,Jan 2015
HRD72N06K_HRU72N06K
Electrical Characteristics TJ=25 °C unless otherwise sp...
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