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HRA72N10K Dataheets PDF



Part Number HRA72N10K
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HRA72N10K DatasheetHRA72N10K Datasheet (PDF)

HRA72N10K HRA72N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 150nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 5.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 5.5mΩ ID = 140 A TO-247 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EA.

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HRA72N10K HRA72N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 150nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 5.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 5.5mΩ ID = 140 A TO-247 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 100 140 98 490 ±25 850 30 300 2.0 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 Units V A A A V mJ mJ W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient Typ. --- Max. 0.5 40 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRA72N10K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 40 A 2.2 -- gFS Forward Transconductance Off Characteristics VDS = 20, ID = 40 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 ㎂ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125℃ VGS = ±25 V, VDS = 0 V 100 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz ----- td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 50 V, ID = 30 A, RG = 6 Ω VDS = 80 V, ID = 30 A, VGS = 10 V -------- Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 30 A, VGS = 0 V diF/dt = 100 A/μs ------ -- 3.8 5.5 7.2 90 -- -- --- 1 -- 100 -- ±100 6200 690 430 1.7 ----- 90 -80 -220 -60 -150 -30 -60 -- -- 140 -- 490 -- 1.3 50 -65 -- V mΩ S V ㎂ ㎂ ㎁ ㎊ ㎊ ㎊ Ω ㎱ ㎱ ㎱ ㎱ nC nC nC A V ㎱ nC Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=32A, VDD=40V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRA72N10K Typical Characteristics ID, Drain Current [A] DS(ON)R [mΩ], Drain-Source On-Resistance V GS Top : 15 V 10 V 8V .


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