Document
HRA72N10K
HRA72N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 150nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
December 2014
BVDSS = 100 V RDS(on) typ = 5.5mΩ ID = 140 A
TO-247
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25℃) - Derate above 25℃
100 140 98 490 ±25 850 30 300 2.0
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
Units V A A A V mJ mJ W
W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 0.5 40
Units ℃/W
◎ SEMIHOW REV.A0,December 2014
HRA72N10K
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 40 A
2.2 --
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 40 A
--
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 ㎂ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125℃ VGS = ±25 V, VDS = 0 V
100 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
-----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 50 V, ID = 30 A, RG = 6 Ω
VDS = 80 V, ID = 30 A, VGS = 10 V
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 30 A, VGS = 0 V diF/dt = 100 A/μs
------
-- 3.8 5.5 7.2 90 --
-- --- 1 -- 100 -- ±100
6200 690 430 1.7
-----
90 -80 -220 -60 -150 -30 -60 --
-- 140 -- 490 -- 1.3 50 -65 --
V mΩ S
V ㎂ ㎂ ㎁
㎊ ㎊ ㎊ Ω
㎱ ㎱ ㎱ ㎱ nC nC nC
A
V ㎱ nC
Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=32A, VDD=40V, RG=25Ω, Starting TJ =25°C
◎ SEMIHOW REV.A0,December 2014
HRA72N10K
Typical Characteristics
ID, Drain Current [A]
DS(ON)R [mΩ], Drain-Source On-Resistance
V GS
Top : 15 V
10 V
8V
.