HGA40N120FV

HGA40N120FV HGA40N120FV 1200V Field Stop Trench IGBT FEATURES  1200V Field Stop Trench Technology  Low Saturation Voltage  High Switching Frequency  Very Soft, Fast Recovery Anti-parallel diode APPLICATION  Welding Converters  Uninterruptible Power Supply  General Purpose Inverters March 2015 VCES = 1200 V IC = 40 A VCE(sat) typ = 2.0 V TO-247 GC E Absolute Maximum Ratings Symbol VCES IC ICM IF IFM VGES PD TJ, TSTG TL Parameter Collector-Emitter Voltage Collector Current Collector Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) Collector Current – Pulsed (Note 1) Diode Forward Current – Continuous (TC = 100℃) Diode Maximum Forward Current Gate-Emitter Voltage Power Dissipation Power Dissipation – Continuous (TC = 25℃) – Continuous (TC = 100℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Notes: 1. Pulse width limited by max junction temperature Thermal Resistance Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Value 1200 64 40 160 20 60 ±20 400 160 -55 to +150 300 Typ. ---- Max. 0.31 1.11 40 Units V A A A A A V W W ℃ ℃ Units ℃/W ◎ SEMIHOW REV.A0,May 2014 HGA40N120FV Electrical Characteristics of the IGBT TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGE(th) Gate-Emitter Threshold Voltage VCE = VGE, IC = 1.5 mA 4.0 -- 7.0 VCE(sa...