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HFT1N60F
N-Channel MOSFET
Description
HFT1N60F May 2015 HFT1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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