P-Channel MOSFET
Product Summary
V(BR)DSS -12V
RDS(ON)
100mΩ @ VGS = -4.5 V 160mΩ @ VGS = -2.5V 200mΩ @ VGS = -1.8V 380mΩ @ VGS = -1.5V...
Description
Product Summary
V(BR)DSS -12V
RDS(ON)
100mΩ @ VGS = -4.5 V 160mΩ @ VGS = -2.5V 200mΩ @ VGS = -1.8V 380mΩ @ VGS = -1.5V
ID TA = +25°C
-2A
-1A
-0.5A -0.2A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Power Management Functions Backlighting Load Switch
X2-DFN1010-3
DMP1200UFR4
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance ESD Protected Gate Low Input/Output Leakage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN1010-3 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.0015 grams (Approximate)
NEW PRODUCT
ESD PROTECTED
Bottom View
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP1200UFR4-7
X2-DFN1010-3
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Ha...
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