DMP1018UCB9

AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIUIOCONTN Product Summary VDSS -12V RDS(on) 12mΩ Qg 4.9nC Qgd 1.1nC ID -7.6A Typ. @ VGS = -4.5V, TA = +25°C Description This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Applications  DC-DC Converters  Battery Management  Load Switch DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Features  LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching  Vgs(th) = -0.8V typ. for a Low Turn-On Potential  CSP with Footprint 1.5mm × 1.5mm  Height = 0.62mm for Low Profile  ESD = 3kV HBM Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: U-WLB1515-9  Terminal Connections: See Diagram Below GSS ESD PROTECTED TO 3kV S SS D DD Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 3) Notes: Part Number DMP1018UCB9-7 Case U-WLB1515-9 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes I...