A1831

Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes). Package Dimensions unit:mm 2010B [2SA1831] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=–800V, IE=0 VEB=–5V, IC=0 VCE=–5V, IC=–2mA VCE=–10V, IC=–2mA VCB=–100V, f=1MHz IC=–1mA, IB=–200µA IC=–1mA, IB=–200µA JEDEC : TO-220AB EIAJ : SC-46 E : Emitter C : Collector B : Base Ratings –800 –800 –7 –20 –60 1.75 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 20 10 1.6 max –1 –1 50 –1 –1.5 Unit µA µA MHz pF V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose ...