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VSB15L45
Vishay General Semiconductor
Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low VF = 0.29 V at IF = 5 A
TMBS® P600
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar by-pass mode application • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(DC) VRRM IFSM VF at IF = 15 A TOP max. (AC mode) TJ max. (DC forward current) Package
15 A 45 V 200 A 0.41 V 150 °C 200 °C P600
Diode variation
Single die
TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA Case: P600 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
VRRM IF(AV) (1) IF(AV) (2)
IFSM
Operating junction temperature range (AC mode)
Storage temperature range
Junction temperature in DC forward current without reverse bias, t 1 h (fig. 2)
TOP TSTG TJ (3)
Notes
(1) With heatsink (2) Without heatsink, free air (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
VSB15L45 V15L45 45 15 7.0
200
-40 to +150 -40 to +175
200
UNIT V A
°C
Revision: 23-Feb-12
1 Document Number: 89478
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VSB15L45
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current Typical junction capacitance
IF = 5.0 A IF = 7.5 A IF = 15 A IF = 5.0 A IF = 7.5 A IF = 15 A
VR = 45 V
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C TA = 25 °C TA = 125 °C
VF (1)
IR (2) CJ
0.41 0.44 0.49 0.29 0.33 0.41
17
1430
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: 40 ms pulse width
MAX.
0.57 0.50 4.0 35
-
UNIT
V
mA pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB15L45
Thermal resistance Typical thermal resistance
RJA (1) RJL (1) RJL (2)
50 3.5 2.5
Notes
(1) Without heatsink, free air; units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length (2) Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink
UNIT °C/W °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSB15L45-M3/54
1.88
54
VSB15L45-M3/73
1.88
73
BASE QUANTITY 800 300
DELIVERY MODE 13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A) Percentage of Rated Current (%)
8 Free air, without Heatsink
7
6
5
120
100 DC Current with Heatsink
80
4 60
3 40
2 20
1
0 0 25 50 75 100 125 150 175
0 0 25 50 75 100 125 150 175 200
Ambient Temperature (°C) Fig. 1 - Forward Current Derating Curve
Ambient Temperature (°C) Fig. 2 - Rated Forward Current vs. Ambient Temperature
Revision: 23-Feb-12
2 Document Number: 89478
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VSB15L45
Vishay General Semiconductor
Average Power Loss (W)
9.0 D = 0.5 D = 0.8
8.0 D = 0.3 D = 0.2
7.0 D = 0.1
6.0 D = 1.0
5.0
4.0 3.0 T
2.0
1.0
D = tp/T
tp
0.0 0
2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C 1
TA = 25 °C
0.1 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Junction Capacitance (pF)
Instantaneous Reverse Current (mA)
100 TA = 150 °C TA = 125 °C
10 TA = 100 °C
1
0.1 0.01
TA = 25 °C
0.001 20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
10 000
TJ = 25 °C f = 1.0 MHz
Vsig = 50 mVp-p
1000
100 0.1 1 10
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
100
Instantaneou.