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VSB15L45 Dataheets PDF



Part Number VSB15L45
Manufacturers Vishay
Logo Vishay
Description Photovoltaic Solar Cell Protection Schottky Rectifier
Datasheet VSB15L45 DatasheetVSB15L45 Datasheet (PDF)

www.vishay.com VSB15L45 Vishay General Semiconductor Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS® P600 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar by-pass mode application • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIM.

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www.vishay.com VSB15L45 Vishay General Semiconductor Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS® P600 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar by-pass mode application • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 15 A TOP max. (AC mode) TJ max. (DC forward current) Package 15 A 45 V 200 A 0.41 V 150 °C 200 °C P600 Diode variation Single die TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: P600 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load VRRM IF(AV) (1) IF(AV) (2) IFSM Operating junction temperature range (AC mode) Storage temperature range Junction temperature in DC forward current without reverse bias, t  1 h (fig. 2) TOP TSTG TJ (3) Notes (1) With heatsink (2) Without heatsink, free air (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test VSB15L45 V15L45 45 15 7.0 200 -40 to +150 -40 to +175  200 UNIT V A °C Revision: 23-Feb-12 1 Document Number: 89478 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VSB15L45 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Instantaneous forward voltage Reverse current Typical junction capacitance IF = 5.0 A IF = 7.5 A IF = 15 A IF = 5.0 A IF = 7.5 A IF = 15 A VR = 45 V 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF (1) IR (2) CJ 0.41 0.44 0.49 0.29 0.33 0.41 17 1430 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: 40 ms pulse width MAX. 0.57 0.50 4.0 35 - UNIT V mA pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSB15L45 Thermal resistance Typical thermal resistance RJA (1) RJL (1) RJL (2) 50 3.5 2.5 Notes (1) Without heatsink, free air; units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length (2) Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink UNIT °C/W °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE VSB15L45-M3/54 1.88 54 VSB15L45-M3/73 1.88 73 BASE QUANTITY 800 300 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Percentage of Rated Current (%) 8 Free air, without Heatsink 7 6 5 120 100 DC Current with Heatsink 80 4 60 3 40 2 20 1 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 200 Ambient Temperature (°C) Fig. 1 - Forward Current Derating Curve Ambient Temperature (°C) Fig. 2 - Rated Forward Current vs. Ambient Temperature Revision: 23-Feb-12 2 Document Number: 89478 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VSB15L45 Vishay General Semiconductor Average Power Loss (W) 9.0 D = 0.5 D = 0.8 8.0 D = 0.3 D = 0.2 7.0 D = 0.1 6.0 D = 1.0 5.0 4.0 3.0 T 2.0 1.0 D = tp/T tp 0.0 0 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous Forward Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics Junction Capacitance (pF) Instantaneous Reverse Current (mA) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Leakage Characteristics 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance 100 Instantaneou.


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